GaN Transistor Modeling for RF and Power Electronics

Part I: Introduction
1. GaN Device Physics
2. GaN HEMT Models

Part II: ASM-HEMT Model
3. Surface Potential, 2DEG, and Drain Current Model
4. Self-Heating and Temperature Effects
5. Noise and Gate Current

Part III: ASM-HEMT for GaN Power Electronics
6. GaN Power Device Characterization
7. Terminal Charges and Capacitances
8. TCAD Simulation
9. Switching Collapse

Part IV: ASM-HEMT for GaN RF Electronics
10. Characterization of RF GaN HEMTs
11. RF Modeling-I
12. RF Modeling-II

Part V: Miscellaneous
13. Parameter Extraction
14. Model Quality Testing

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• Circuitos e componentes

GaN; Gallium Nitride; Power Amplifier; semiconductor; transistor; power semiconductor; RF Circuit Design; RF Switch; Source-Pull; Load-Pull; Harmonics; Circuit simulation; parameter extraction; power switch; physics-based compact model; compact model; process design kit